EMD4DXV6T1G
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- 制造商 :
- onsemi
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列,预偏置
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA, 10V
- Frequency - Transition :
- -
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Power - Max :
- 500mW
- Product Status :
- Active
- Resistor - Base (R1) :
- 47kOhms, 10kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- SOT-563
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- 数据列表
- EMD4DXV6T1G
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