NTE912

制造商 :

NTE Electronics, Inc.

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

50mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 1mA, 3V

Frequency - Transition :

550MHz

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 125°C (TA)

Power - Max :

750mW

Product Status :

Active

Supplier Device Package :

14-PDIP

Transistor Type :

5 NPN

Vce Saturation (Max) @ Ib, Ic :

230mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

24V