EMX4T2R

制造商 :

ROHM Semiconductor

产品分类 :

分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列

Current - Collector (Ic) (Max) :

50mA

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 10mA, 10V

Frequency - Transition :

1.5GHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW

Product Status :

Active

Supplier Device Package :

EMT6

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 4mA, 20mA

Voltage - Collector Emitter Breakdown (Max) :

20V