EMT1T2R
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- 制造商 :
- ROHM Semiconductor
- 产品分类 :
- 分立半导体产品 > 晶体管 - 双极 (BJT) - 阵列
- Current - Collector (Ic) (Max) :
- 150mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA, 6V
- Frequency - Transition :
- 140MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SOT-563, SOT-666
- Power - Max :
- 150mW
- Product Status :
- Active
- Supplier Device Package :
- EMT6
- Transistor Type :
- 2 PNP (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- 数据列表
- EMT1T2R
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