CMG06(TE12L,Q,M)
请求报价（RFQ）
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- 制造商 :
- Toshiba Electronic Devices and Storage Corporation
- 产品分类 :
- 分立半导体产品 > 二极管 - 整流器 - 单
- Capacitance @ Vr, F :
- -
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 600 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -40°C ~ 150°C
- Package / Case :
- SOD-128
- Product Status :
- Obsolete
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- M-FLAT (2.4x3.8)
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 1 A
- 数据列表
- CMG06(TE12L,Q,M)
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| CMG02(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE GEN PURP 400V 2A M-FLAT |
| CMG03(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE GEN PURP 600V 2A M-FLAT |
| CMG03A,LQ(M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH |
| CMG05(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE GEN PURP 400V 1A M-FLAT |
| CMG06A,LQ(M | Toshiba Electronic Devices and Storage Corporation | 35,000 | MOSFET N-CH |
| CMG07(TE12L,Q,M) | Toshiba Electronic Devices and Storage Corporation | 35,000 | DIODE GEN PURP 400V 1A M-FLAT |
