- 制造商 :
- Semtech
- 产品分类 :
- 分立半导体产品 > 二极管 - 整流器 - 单
- Capacitance @ Vr, F :
- 23pF @ 5V, 1MHz
- Current - Average Rectified (Io) :
- 2A
- Current - Reverse Leakage @ Vr :
- 500 nA @ 200 V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- Axial
- Product Status :
- Discontinued at Digi-Key
- Reverse Recovery Time (trr) :
- 2 µs
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- Axial
- Voltage - DC Reverse (Vr) (Max) :
- 200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 1 A
- 数据列表
- 1N5614
制造商相关产品
目录相关产品
相关产品
| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| 1N5610 | Microchip Technology | 35,000 | TVS DIODE 30.5VWM 47.6VC G AXIAL |
| 1N5610E3 | Microchip Technology | 35,000 | TVS DIODE 30.5VWM 47.6VC G AXIAL |
| 1N5611 | Microchip Technology | 35,000 | TVS DIODE |
| 1N5612 | Microchip Technology | 35,000 | TVS DIODE 49VWM 78.5VC G AXIAL |
| 1N5613 | Microchip Technology | 35,000 | TVS DIODE C-BODY |
| 1N5614 | Microchip Technology | 504 | DIODE GEN PURP 200V 1A AXIAL |
| 1N5614/TR | Microchip Technology | 35,000 | STD RECTIFIER |
| 1N5614C.TR | Semtech | 35,000 | D 1A STD 200V TR |
| 1N5614GP-E3/54 | Vishay | 35,000 | DIODE GEN PURP 200V 1A DO204AC |
| 1N5614GP-E3/73 | Vishay | 35,000 | DIODE GEN PURP 200V 1A DO204AC |
| 1N5614GPHE3/54 | Vishay | 35,000 | DIODE GEN PURP 200V 1A DO204AC |
| 1N5614US | Microchip Technology | 540 | DIODE GEN PURP 200V 1A D5A |
| 1N5614US/TR | Microchip Technology | 35,000 | STD RECTIFIER |
| 1N5615 | Microchip Technology | 1,232 | DIODE GEN PURP 200V 1A AXIAL |
| 1N5615 | Semtech | 35,000 | DIODE GEN PURP 200V 2A AXIAL |
