1N5802US/TR
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- 制造商 :
- Microchip Technology
- 产品分类 :
- 分立半导体产品 > 二极管 - 整流器 - 单
- Capacitance @ Vr, F :
- 25pF @ 10V, 1MHz
- Current - Average Rectified (Io) :
- 1A
- Current - Reverse Leakage @ Vr :
- 1 µA @ 50 V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- SQ-MELF, A
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- 25 ns
- Speed :
- Fast Recovery =< 500ns, > 200mA (Io)
- Supplier Device Package :
- D-5A
- Voltage - DC Reverse (Vr) (Max) :
- 50 V
- Voltage - Forward (Vf) (Max) @ If :
- 875 mV @ 1 A
- 数据列表
- 1N5802US/TR
制造商相关产品
目录相关产品
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| 1N5802 | Microchip Technology | 606 | DIODE GEN PURP 50V 1A AXIAL |
| 1N5802 | Solid State Inc. | 35,000 | DO-204AP 2.5 AMP RECTIFIER |
| 1N5802 | Semtech | 35,000 | DIODE GEN PURP 50V 3.3A AXIAL |
| 1N5802/TR | Microchip Technology | 35,000 | RECTIFIER UFR,FRR |
| 1N5802URS | Microchip Technology | 35,000 | UFR,FRR |
| 1N5802US | Microchip Technology | 270 | DIODE GEN PURP 50V 1A D5A |
| 1N5802US | Semtech | 35,000 | DIODE GEN PURP 50V 1.1A |
| 1N5803 | Solid State Inc. | 35,000 | DO-204AP 2.5 AMP RECTIFIER |
| 1N5803 | Microchip Technology | 35,000 | DIODE GEN PURP 75V 1A AXIAL |
| 1N5803/TR | Microchip Technology | 35,000 | RECTIFIER UFR,FRR |
| 1N5803E3 | Microchip Technology | 35,000 | UFR,FRR |
| 1N5803E3/TR | Microchip Technology | 35,000 | UFR,FRR |
| 1N5803US | Microchip Technology | 35,000 | UFR,FRR |
| 1N5803US/TR | Microchip Technology | 35,000 | UFR,FRR |
| 1N5804 | Solid State Inc. | 4,900 | RECT 2.5 AMP 100V DO204AP |
