S2D-13-F

制造商零件号
S2D-13-F
制造商
Diodes Incorporated
包装/案例
-
数据表
S2D-13-F
描述
DIODE GEN PURP 200V 1.5A SMB
库存
16330

请求报价(RFQ)

* 联系人姓名:
  公司:
* 电子邮件:
  电话:
  评论:
制造商 :
Diodes Incorporated
产品分类 :
分立半导体产品 > 二极管 - 整流器 - 单
Capacitance @ Vr, F :
20pF @ 4V, 1MHz
Current - Average Rectified (Io) :
1.5A
Current - Reverse Leakage @ Vr :
5 µA @ 200 V
Diode Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature - Junction :
-65°C ~ 150°C
Package / Case :
DO-214AA, SMB
Product Status :
Active
Reverse Recovery Time (trr) :
-
Speed :
Standard Recovery >500ns, > 200mA (Io)
Supplier Device Package :
SMB
Voltage - DC Reverse (Vr) (Max) :
200 V
Voltage - Forward (Vf) (Max) @ If :
1.15 V @ 1.5 A
数据列表
S2D-13-F

制造商相关产品

目录相关产品

  • ROHM Semiconductor
    DIODE SCHOTTKY 650V 10A TO263AB
  • onsemi
    DIODE GEN PURP 100V 200MA DO35
  • SMC Diode Solutions
    DIODE GEN PURP 400V 1A SMA
  • SMC Diode Solutions
    DIODE GEN PURP 1KV 1A SMA
  • Nexperia
    DIODE GP 100V 215MA TO236AB

相关产品

部分 制造商 库存 描述
S2D-13 Diodes Incorporated 35,000 DIODE GEN PURP 200V 1.5A SMB
S2D-18B2-0808-150-P II-VI 35,000 2D SILICON NANOSTAMP: RECTANGULA
S2D-18B2-0808-350-P II-VI 35,000 2D SILICON NANOSTAMP: RECTANGULA
S2D-18B3-0808-150-P II-VI 35,000 2D SILICON NANOSTAMP: RECTANGULA
S2D-18B3-0808-350-P II-VI 3 2D SILICON NANOSTAMP: RECTANGULA
S2D-18C2-0808-150-P II-VI 3 2D SILICON NANOSTAMP: HEXAGONAL
S2D-18C2-0808-350-P II-VI 3 2D SILICON NANOSTAMP: HEXAGONAL
S2D-18C3-0808-150-P II-VI 35,000 2D SILICON NANOSTAMP: HEXAGONAL
S2D-18C3-0808-350-P II-VI 35,000 2D SILICON NANOSTAMP: HEXAGONAL
S2D-18D3-0808-150-P II-VI 35,000 2D SILICON NANOSTAMP: HEXAGONAL
S2D-18D3-0808-350-P II-VI 3 2D SILICON NANOSTAMP: HEXAGONAL
S2D-24B2-0808-150-P II-VI 35,000 2D SILICON NANOSTAMP: RECTANGULA
S2D-24B2-0808-350-P II-VI 3 2D SILICON NANOSTAMP: RECTANGULA
S2D-24B3-0808-150-P II-VI 35,000 2D SILICON NANOSTAMP: RECTANGULA
S2D-24B3-0808-350-P II-VI 5 2D SILICON NANOSTAMP: RECTANGULA