DF2005-G
请求报价（RFQ）
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- 制造商 :
- Comchip Technology
- 产品分类 :
- 分立半导体产品 > 二极管 - 桥式整流器
- Current - Average Rectified (Io) :
- 2 A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 50 V
- Diode Type :
- Single Phase
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Product Status :
- Active
- Supplier Device Package :
- 4-DF
- Technology :
- Standard
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 2 A
- Voltage - Peak Reverse (Max) :
- 50 V
- 数据列表
- DF2005-G
制造商相关产品
目录相关产品
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| 部分 | 制造商 | 库存 | 描述 |
|---|---|---|---|
| DF2000MA-49-50 | 3M | 29 | DF2000MA W/ADHESIVE 49INX50YDS |
| DF2001A | Siglent Technologies | 4 | POWER ANALYSIS DESKEW FIXTURE- F |
| DF2005S-G | Comchip Technology | 35,000 | BRIDGE RECT 1PHASE 50V 2A DFS |
| DF2005SP-G | Comchip Technology | 35,000 | BRIDGE RECT 1PHASE 50V 2A DFS |
| DF2005ST-G | Comchip Technology | 35,000 | BRIDGE RECT 1PHASE 50V 2A DFS |
| DF200AB160 | Sansha Electric | 35,000 | DIOE MODULE 1600V 200A |
| DF200AB80 | Sansha Electric | 35,000 | DIOE MODULE 800V 200A |
| DF200AE160 | Sansha Electric | 35,000 | DIODE MODULE 1600V 200A |
| DF200AE80 | Sansha Electric | 35,000 | DIODE MODULE 800V 200A |
| DF200R07W2H3B77BPSA1 | Infineon Technologies | 15 | LOW POWER EASY AG-EASY2B-411 |
| DF200R12KE3HOSA1 | Infineon Technologies | 35,000 | IGBT MODULE 1200V 1040W |
| DF200R12PT4B6BOSA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 300A 1100W |
| DF200R12W1H3B27BOMA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 30A 375W |
| DF200R12W1H3FB11BOMA1 | Infineon Technologies | 35,000 | IGBT MOD 1200V 30A 20MW |
| DF200R12W1H3FB11BPSA1 | Infineon Technologies | 35,000 | IGBT MOD DIODE BRDG EASY1B-2-1 |
