晶体管 - 双极 (BJT) - 单,预偏置
- DC Current Gain (hFE) (Min) @ Ic, Vce:
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- Package / Case:
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- Power - Max:
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- Resistor - Base (R1):
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- Resistor - Emitter Base (R2):
-
- Supplier Device Package:
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- Transistor Type:
-
- Vce Saturation (Max) @ Ib, Ic:
-
- 已选条件:
4 条记录