晶体管 - 双极 (BJT) - 阵列,预偏置
- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Resistor - Base (R1):
-
- Resistor - Emitter Base (R2):
-
3 条记录
图片 | 型号 | 品牌 | 描述 | 库存 | 操作 | |
---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation | NPN X 2 BRT Q1BSR=2... |
3,890
In-stock
|
提交询价 | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | NPN X 2 BRT Q1BSR=4... |
3,773
In-stock
|
提交询价 | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | NPN X 2 BRT Q1BSR=1... |
2,636
In-stock
|
提交询价 |